Wideband oxygen sensing

ABSTRACT

An oxygen sensor that has both an n-type oxygen sensing portion comprising an n-type semiconductor layer and a p-type oxygen sensing portion comprising an p-type semiconductor layer. The n-type sensing portion and the p-type sensing portion share the common electrode. The n-type semiconductor layer and the p-type semiconductor layer attach directly to the common electrode, but are not in physical contact with each other such that a lateral gap exists between the n-type semiconductor layer and the p-type semiconductor layer. The air:fuel ratio for a combustion process may be determined, using the same oxygen sensor, across a range of air:fuel values in both the rich and lean regions; as such, the oxygen sensor may act as a wideband oxygen sensor.

This application is a divisional of U.S. patent application Ser. No.14/073,222, filed 6 Nov. 2013, and claims benefit of U.S. ProvisionalApplication No. 61/725,209, filed 12 Nov. 2012, the disclosures of bothof which are incorporated by reference herein in their entirety.

BACKGROUND

This application is related to oxygen sensors, methods of using oxygensensors, and related systems for use with combustion processes, forexample in internal combustion engines.

As known by those of skill in the art, the air:fuel ratio in combustionprocesses, particularly in internal combustion engines, is typicallyrepresented by lambda (λ), with λ defined as is the actual air:fuelratio divided by the air:fuel ratio at the exact stoichiometric mixture.Thus, in mathematical termsλ=air:fuel_(actual)/air:fuel_(stoichiometric). Values less than 1.0 arefuel-rich (rich), values greater than 1.0 are fuel-lean (lean). For manyinternal combustion engines, maximum power is achieved around λ=0.86,and maximum fuel economy is achieved around λ=1.45-1.55. As can beappreciated, engine management systems typically focus heavily oncontrolling λ. As such, most large internal combustion engines haveoxygen sensors to sense exhaust gas oxygen levels, with the data fromthe oxygen sensor used by the engine management systems for variousengine management functions. For smaller internal combustion engines,such as those used in motorcycles, all-terrain vehicles, recreationalmarine applications, and unmanned air vehicles, the size constraints ofthe engines presents difficulties in identifying suitable oxygensensors.

Fortunately, small resistive-based oxygen sensors are known, see, forexample, U.S. Patent Application Publication 2011/0186446. Such oxygensensors find a particular application in engine management control forsmall internal combustion engines. In addition, such sensors are usefulfor individual cylinder control in multi-cylinder engines and hybridengines for automotive and off-road applications.

The 2011/0186446 oxygen sensor may be considered as a switching oxygensensor with some unique properties. Such sensors have a drastic change(orders of magnitude) in the resistance of the sensor element whentransitioning across the stoichiometric boundary in air:fuel ratio ofLambda (λ)=1.00. For example, for the n-type semiconductor version ofthe 2011/0186446 sensor, above this crossover point (in the lean regionwith λ>1.00), the sensor's resistance is very high and not significantlyresponsive to changes in the oxygen content in the gasses to which it isexposed; however, below this crossover point (in the rich region withλ<1.00) the resistance is significantly lower and has a positiverelationship with oxygen content. Conversely, for the p-typesemiconductor version of the 2011/0186446 sensor, the resistance is veryhigh in the rich region, but is lower and has a positive relationshipwith oxygen content in the lean region.

While the 2011/0186446 sensors are useful for many situations, such asthose described in the 2011/0186446 publication, there remains a needfor alternative oxygen sensor arrangements, and for alternative methodsof oxygen sensing and controlling combustion processes based on thesensed oxygen level(s), and related systems.

SUMMARY

The present invention provides a method of determining an air:fuel ratioof a combustion process, and/or related devices and/or systems.

A method according to one or more embodiments includes supplying aconstant total sensing current to an oxygen sensing portion of an oxygensensor, with the oxygen sensing portion exposed to exhaust gases fromthe combustion process. The oxygen sensor has an n-type sensing circuitand a p-type sensing circuit that share a common electrode. The sensingcurrent is a sum of a first current in the n-type sensing circuit and asecond current in the p-type sensing circuit. The first current in then-type sensing circuit is determined. The second current in the p-typesensing circuit is determined. A temperature value representative of atemperature of the oxygen sensor is determined. Then, a first valuerepresentative of the air:fuel ratio of the combustion process isdetermined based on the current in the n-type sensing circuit, thecurrent in the p-type sensing circuit, and the temperature value.

The first value may be determined based on a ratio of a log of the firstcurrent to a log of the second current, and the temperature value.

The determining the temperature value may comprise sensing a heaterresistance of a heater portion of the oxygen sensor. The sensing theheater resistance may comprise sensing a current through, and an appliedvoltage of, a heater circuit that includes the heater portion.

The oxygen sensor may comprise a heater portion and a temperature sensordistinct from the heater portion, and the determining the temperaturevalue may comprise determining the temperature value based oninformation from the temperature sensor.

The combustion process may be a combustion process of an engine, whichmay be multi-cylinder engine. The engine may be capable of operating inboth a) a rich mode where air and fuel are supplied to a combustionchamber of the engine such that there is less air than a stoichiometricratio; and b) a lean mode where air and fuel are supplied to thecombustion chamber such that there more air than the stoichiometricratio. The determining the first value may comprise determining thefirst value while the engine is operating in one of the rich mode or thelean mode. The method may further comprise, after operating in the oneof the rich or the lean mode, determining, based on information from theoxygen sensor, a second value representative of the air:fuel ratio,while the engine is operating in the other of the rich mode and the leanmode.

The method may further include controlling the combustion process basedon the first value, such as by adjusting a fuel metering rate.

A wideband oxygen sensor according to one or more embodiments, includesa) an n-type oxygen sensing portion comprising an n-type semiconductorlayer; and b) a p-type oxygen sensing portion comprising an p-typesemiconductor layer. The n-type oxygen sensing portion and the p-typeoxygen sensing portion are electrically connected to a constant currentsource through a shared common electrode of the oxygen sensor. Then-type semiconductor layer and the p-type semiconductor layer aredisposed in spaced relation to each other and both attach directly ontothe common electrode. The wideband oxygen sensor may optionally andadvantageously further include a heater portion disposed in spacedrelation to the n-type oxygen sensing portion and the p-type oxygensensing portion.

A wideband oxygen sensor, according to one or more embodiments includesa) a dielectric substrate; b) a first common electrode affixed to thesubstrate and having first and second combs, each having a plurality offingers; c) a first sensing electrode affixed to the substrate anddisposed on a first lateral side of the first electrode in spacedrelation thereto; d) a second sensing electrode affixed to the substrateand disposed on a second lateral side of the first electrode in spacedrelation thereto; e) an n-type semiconducting material disposed so as tointerconnect the first comb and the first sensing electrode; f) a p-typesemiconducting material disposed in spaced relation to the n-typesemiconducting materials and disposed so as to interconnect the secondcomb and the second sensing electrode. The wideband oxygen sensor mayoptionally and advantageously further include a heater portion affixedto the substrate in spaced relation to the first common electrode andelectrically insulated from the n type semiconducting material and thep-type semiconducting material.

The oxygen sensor may further comprise a first porous dielectricprotective layer covering the n-type semiconducting material, and asecond porous dielectric protective layer covering the p-typesemiconducting material. The first and second porous dielectricprotective layers may be formed by different portions of a continuouslayer.

The oxygen sensor may be such that the first common electrode comprisesa first terminal; the first sensing electrode comprises a secondterminal; the second sensing electrode comprises a third terminal. Ifpresent, the heater portion may comprise a fourth terminal. The firstterminal may be operatively connected to the heater portion.

The dielectric substrate may have first and second oppositely facingsurfaces. The heater portion may be disposed on the first surface of thesubstrate, with the first common electrode and both the first and secondsensing electrodes are disposed closer to the second surface of thesubstrate than to the heater portion.

The oxygen sensor may be configured such that the first common electrodeis disposed on the substrate; the first sensing electrode is disposed onthe substrate; the second sensing electrode is disposed on thesubstrate; and the heater portion is affixed to the substrate in spacedrelation to the electrodes.

The heater circuit may comprise tungsten, platinum, palladium, otherprecious metals, ceramic (such as silicon nitride Si3N4), or othermaterials known in the art.

The oxygen sensor may further comprise control circuits operativelyconnected to the first common electrode, the first sensing electrode,and the second sensing electrode, with the control circuits comprising:a) a constant current source; b) a first pair of resistors connected inseries between the second terminal and the constant current source; c) asecond pair of resistors connected in series between the third terminaland the constant current source. The oxygen sensor may comprise ann-type sensing circuit and a p-type sensing circuit. The n-type sensingcircuit may comprise the first sensing electrode, the n-typesemiconductor layer, the first common electrode, the constant currentsource, and the first pair of resistors. The p-type sensing circuit maycomprise the second sensing electrode, the p type semiconductor layer,the first common electrode, the constant current source, and the secondpair of resistors.

A wideband oxygen sensor according to one or more embodiments includes adielectric substrate; a first common electrode, first and second sensingelectrodes, and first and second semiconductor bridges. The first commonelectrode is affixed to the substrate and has first and second combs,each comb having a plurality of fingers. The first sensing electrode isaffixed to the substrate and disposed on a first lateral side of thefirst electrode in spaced relation thereto. The second sensing electrodeis affixed to the substrate and disposed on a second lateral side of thefirst electrode in spaced relation thereto. The first semiconductorbridge comprises an n-type semiconducting material and is disposed so asto interconnect the first comb and the first sensing electrode. Thefirst semiconductor bridge is attached directly to the first commonelectrode. The second semiconductor bridge comprises a p-typesemiconducting material and is disposed in spaced relation to the n-typesemiconducting material and disposed so as to interconnect the secondcomb and the second sensing electrode. The second semiconductor bridgeis attached directly to the first common electrode and not in physicalcontact with the first semiconductor bridge. The first and secondsemiconductor bridges are separated from each other by a lateral gap.

The wideband oxygen sensor of may also include a first porous dielectricprotective layer covering the n-type semiconducting material, and asecond porous dielectric protective layer covering the p-typesemiconducting material. The first porous dielectric layer may compriseone or more catalytic precious metals and cerium oxide.

The wideband oxygen sensor may include a heater portion affixed to thesubstrate in spaced relation to the first common electrode andelectrically insulated from the n-type semiconducting material and thep-type semiconducting material. The heater portion may compriseplatinum.

The dielectric substrate may have first and second oppositely facingsurfaces, with the heater portion disposed on the first surface of thesubstrate, while the first common electrode and both the first andsecond sensing electrodes are disposed closer to the second surface ofthe substrate than to the heater portion.

The wideband oxygen sensor may be configured such that the first commonelectrode is disposed on the substrate; the first sensing electrode isdisposed on the substrate; the second sensing electrode is disposed onthe substrate; and the heater portion is affixed to the substrate inspaced relation to the electrodes.

The wideband oxygen sensor may be configured such that the first commonelectrode comprises a first terminal; the first sensing electrodecomprises a second terminal; the second sensing electrode comprises athird terminal; and the heater portion comprises a fourth terminal. Thefirst terminal may be operatively connected to the heater portion.

A wideband oxygen sensor according to one or more embodiments includes adielectric substrate; a first common electrode affixed to the substrate;an n-type oxygen sensing portion comprising an n-type semiconductorlayer; and a p-type oxygen sensing portion comprising an p-typesemiconductor layer. The n-type sensing portion and the p-type sensingportion share the common electrode. The n-type semiconductor layer andthe p-type semiconductor layer attach directly to the common electrode,but are not in physical contact with each other such that a lateral gapexists between the n type semiconductor layer and the p-typesemiconductor layer.

The wideband oxygen sensor may have a first porous dielectric protectivelayer covering the n-type semiconducting material, and a second porousdielectric protective layer covering the p-type semiconducting material.

The wideband oxygen sensor may have a heater portion affixed to thesubstrate in spaced relation to the first common electrode andelectrically insulated from the n-type oxygen sensing portion and thep-type oxygen sensing portion. The heater portion may comprise platinum.

The dielectric substrate may have first and second oppositely facingsurfaces, with the heater portion is disposed on the first surface ofthe substrate, and the first common electrode and both the n-type oxygensensing portion and the p-type oxygen sensing portion are disposedcloser to the second surface of the substrate than to the heaterportion.

A wideband oxygen sensor system according to one or more embodimentsincludes a wideband oxygen sensor, connecting circuits, an n-typesensing circuit, and a p type sensing circuit. The wideband oxygensensor may comprise a dielectric substrate; a first common electrodeaffixed to the substrate; an n-type oxygen sensing portion comprising ann-type semiconductor layer; a p-type oxygen sensing portion comprisingan p-type semiconductor layer. The n-type sensing portion and the p-typesensing portion share the common electrode. The n-type semiconductorlayer and the p-type semiconductor layer attach directly to the commonelectrode, but are not in physical contact with each other such that alateral gap exists between the n type semiconductor layer and the p-typesemiconductor layer. The connecting circuits operatively connect to thefirst common electrode, the n-type semiconductor layer, and the p typesemiconductor layer. The connecting circuits include a constant currentsource; a first pair of resistors connected in series between the n-typesemiconductor layer and the constant current source; and a second pairof resistors connected in series between the p type semiconductor layerand the constant current source. The n-type sensing circuit comprisesthe n-type sensing portion, the constant current source, and the firstpair of resistors. The p-type sensing circuit comprises the p-typesensing portion, the constant current source, and the second pair ofresistors.

The various aspects discussed above may be used alone or in anycombination. The various apparatus disclosed herein may operateaccording to any combination of various method disclosed herein, andvice versa. Further, the present invention is not limited to the abovefeatures and advantages. Indeed, those skilled in the art will recognizeadditional features and advantages upon reading the following detaileddescription, and upon viewing the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows schematic representation of an engine, having an oxygensensor of the present invention and/or where the method of the one ormore embodiments of the present invention may be implemented.

FIG. 2 shows a schematic representation of the substrate and oxygensensing electrodes of one embodiment of an oxygen sensor.

FIG. 3 shows the apparatus of FIG. 2 with the addition of n-typesemiconductor layer and a p-type semiconductor layer, and a protectivelayer.

FIG. 4 shows a side view of the apparatus of FIG. 3.

FIG. 5 shows a simplified schematic of the oxygen sensor of FIG. 3connected to a controller via a connecting circuit.

FIG. 6 shows a graph of air:fuel ratio λ versus the ratio (Ψ) of thenatural logs of the current in the n-type sensing circuit and thecurrent in the p-type sensing circuit of the apparatus of FIG. 3, atdifferent temperatures.

FIG. 7 shows a flowchart of an exemplary process for determining anair:fuel ratio.

FIG. 8 shows one multiple-cylinder configuration with a common oxygensensor for all cylinders.

FIG. 9 shows another multiple-cylinder configuration with individualoxygen sensors for each cylinder.

DETAILED DESCRIPTION

In one or more embodiments, the present application is directed to amethod of determining an air:fuel ratio based on information from anoxygen sensor exposed to exhaust gases of a combustion process, andrelated systems. A constant current is supplied to an oxygen sensor thathas both an n-type sensing circuit and a p-type sensing circuit thatshare a common electrode. A first current in the n-type sensing circuitis determined, and a second current in the p-type sensing circuit isdetermined. In addition, a temperature value representative of atemperature of the oxygen sensor is determined. Then, a first valuerepresentative of the air:fuel ratio is determined based on thedetermined currents and the temperature value. The combustion processmay then be controlled based on the first value representative of theair:fuel ratio. The air:fuel ratio may be determined, using the sameoxygen sensor, across a range of air:fuel values in both the rich andlean regions; as such, the oxygen sensor may be referred to as a“wideband” oxygen sensor.

For simplicity, the discussion below may generally be in the context ofan oxygen sensor for a small displacement gasoline powered internalcombustion engine, but it should be understood that the oxygen sensor(s)disclosed herein may be used in other internal combustion engineapplications, such a hydrogen powered engines, other hydrocarbon poweredengines, diesel engines, Homogeneous Charge Compression Ignition (HCCI)engines, and Reactivity Controlled Compression Ignition (RCCI) engines.Further, the disclosed method(s) may be used with other combustionprocesses, such as, for example, those found in furnaces and waterheaters.

FIG. 1 shows a schematic of an internal combustion engine 10, which maybe of any type (e.g., piston, rotary, nutating disk, etc.). The engine10 includes at least one combustion chamber 12 with associated piston,valves, etc. (note shown), an intake manifold 18, an exhaust manifold19, and an engine management system 30. The intake manifold 18 suppliesair to the combustion chamber 12. An mass airflow sensor 22advantageously with associated temperature sensor is disposed in theintake 18 manifold so that the incoming air conditions may be monitoredand/or controlled. A controllable fuel metering system such as athrottle body and fuel injector 16 supplies fuel to the combustionchamber under control of the engine management system 30. For sparkignition engines, a spark ignition device 14, e.g., spark plug, operatesunder the control of the engine management system 30 to ignite the airand fuel mixture in the combustion chamber 12 at the desired time in thecycle for proper combustion. An oxygen sensor 50 is disposed in theexhaust plenum 19 to sense the amount of oxygen in the exhaust gases, sothat the proper air:fuel ratio may be properly metered and maintained.The engine management system 30 includes one or more processing circuits32 (collectively “controller”) that control the fuel supply, ignitiontiming, and other engine parameters based on the input from the varioussensors and the programming of the processing circuits 32. For example,the engine management system 30 uses the oxygen sensor 50, as describedbelow, to help control the engine 10 so that the engine 10 operates atthe desired air:fuel ratio. Other than the particulars of the oxygensensor 50 and the operation of the processing circuit(s) 32 described ingreater detail below, the configuration and operations of the engine 10are well known to those of skill in the art, and are not discussedfurther herein in the interests of clarity. As can be appreciated, theengine 10 is able to operate in a rich mode or region where λ<1.00, in alean mode or region where λ<1.00, and at a stoichiometric point S whereλ=1.00.

The oxygen sensor 50 is advantageously a resistive-based oxygen sensor.With reference to FIGS. 2-4, the oxygen sensor 50 includes an oxygensensing portion 60 and optionally a resistance-based heater portion 54.The oxygen sensing portion 60 may advantageously comprise a commonelectrode 62, a first sensing electrode 70, and a second sensingelectrode 80, all disposed on one side of a dielectric substrate 52which may be a fired ceramic dielectric substrate. The common electrode62 includes a central area 61 and two sets of fingers 64, each setincluding a plurality of fingers, that form respective combs 66,68. Thecombs 66,68 advantageously extend in opposite lateral directions fromthe central area 61. The first sensing electrode 70 is disposed on onelateral side of the common electrode 62 in spaced relation thereto. Thefirst sensing electrode 70 includes a set of a plurality of fingers 72that form a comb 74, and a terminal area 76. The comb 74 of the firstsensing electrode 70 is advantageously intermeshed with comb 66 of thecommon electrode 62, with the respective fingers 64,72 being spaced fromeach other so that there is not direct contact between the twoelectrodes 62,70. Likewise, the second sensing electrode 80 is disposedon the opposite lateral side of the common electrode 62 from the firstsensing electrode 70, and in spaced relation to the common electrode 62.The second sensing electrode 80 includes a plurality of fingers 82 thatform a comb 84. The comb 84 of the second sensing electrode 80 isadvantageously intermeshed with comb 68 of the common electrode 62, withthe respective fingers 64,82 being spaced from each other so that thereis not direct contact between the two electrodes 62,80. Further, thereis no direct contact between the first and second sensing electrodes70,80. Note that the electrodes 70,80 may be formed of any suitablematerial, such as platinum. Note that the length and spacing of thefingers 64,72,82 of combs 66,68,74,84, and their particular materials,including the semiconducting and catalytic materials, may be adjusted asdesired for the particular operating conditions for the sensor 50. Notefurther that the fingers 64,72,82 of electrodes 62,70,80 need not be thesame dimensions and that electrodes 70,80 need not be spaced the samefrom the common electrode 62.

An n-type metal oxide semiconductor layer 56 is placed over combs 66,74so that the layer 56 forms a semiconductor bridge between the firstsensing electrode 70 and the common electrode 62. Likewise a p-typemetal oxide semiconductor layer 58 is placed over combs 68,84 so thatthe layer 58 forms a semiconductor bridge between the second sensingelectrode 80 and the common electrode 62. Note that layer 56 and layer58 should be isolated from each other (no contact). The layers 56,58 areadvantageously sintered to the their respective electrodes to ensuregood physical and electrical contact. Relevant to the discussion below,it should be understood that an n-type semiconductor has a resistancethat is significantly lower and has a positive relationship with oxygencontent when exposed to exhaust gases from a combustion processoperating in the rich region, while the resistance is relatively highand may be uncorrelated to the oxygen content in the lean region.Conversely, a p-type semiconductor has a resistance that issignificantly lower and has a positive relationship with oxygen contentwhen exposed to exhaust gases from a combustion process operating in thelean region, while the resistance is relatively high and may beuncorrelated to the oxygen content in the rich region.

A porous dielectric protective coating layer 59 may be placed over thesemiconductor layers 56,58, and neighboring portions of the electrodes.This coating layer 59 may be on continuous coating layer over bothsemiconductor layers 56,58, with respective first and second portions,or the first portion 59 a and second portion 59 b may be distinct fromeach other. This coating layer 59 may include catalytic preciousmetal(s), such as platinum, and/or palladium, and/or rhodium, as well asoxygen storage components such as cerium oxide or other suitablematerial as may be necessary to achieve the desired functionalcharacteristics of the oxygen sensing portion 60. These catalyticmaterials may be an initial part of the composition of the protectivelayer 59, or added as to impregnate the protective layer 59 in asubsequent operation.

The optional heater portion 54 is advantageously disposed on an oppositeside of the dielectric substrate 52 from the oxygen sensing portion 60.See FIG. 4. In other embodiments, the heater portion 54 may be disposedon the same side of the dielectric substrate 52 as the oxygen sensingportion 60, provided the two portions are electrically isolated (otherthan through ground). In still other embodiments, the heater portion 54is omitted. The heater portion 54 may take any suitable form and may beformed of any suitable material such as tungsten, platinum, palladium,other precious metals, ceramic (such as silicon nitride Si₃N₄), or othermaterials known in the art. Advantageously, the heater portion 54 isconnected to ground and to a voltage source, such as a twelve voltvoltage source VS1. The heater portion 54 may also have a suitableprotective and/or electrically insulating layer, as desired.

The oxygen sensor 50 may have suitable connections for power and othersignals. For example, in some embodiments, the oxygen sensor 50 has fourcontact pads or leads 55, 69, 79, 89 for making suitable connections.Lead 55 is electrically connected to the heater portion 54, andfunctions as a power (+) lead for the heater portion 54. Lead 69 iselectrically connected to the common electrode 62, and acts as a ground(−) lead. Lead 79 is electrically connected to the first sensingelectrode 70, and acts as the input to first sensing electrode 70. Lead89 is electrically connected to the second sensing electrode 80, andacts as the input to second sensing electrode 80. Lead 69 may alsofunction as a ground lead for heater portion 54, or there may be anadditional lead (not shown) for a separate ground lead for heaterportion 54.

The oxygen sensor 50 is connected to the controller 32 so that thesensed oxygen level data from the sensor 50 is supplied to thecontroller 32. In order to facilitate this, the oxygen sensor 50 is, asshown in FIG. 5, connected to the controller 32 via a connecting circuit90. Note that the connecting circuit 90 may be integrated into an oxygensensor assembly, integrated into the controller 32, be a separatecomponent or components between the oxygen sensor 50 and the controller32, or dispersed in any suitable manner. The connecting circuit 90includes voltage source VS₁, which for purposes of this illustrativeembodiment will be assumed to be a twelve volt voltage source. Voltagesource VS₁ connects to one side of heater portion 54 via shunt resistorR_(HS). Suitable leads disposed on either side of shunt resistor R_(HS)allow the voltage drop V_(HS) across shunt resistor R_(HS) to bemeasured. Note that the line L_(VHS) for V_(HS), as with other voltagedrop signals herein, is illustrated and discussed as being a single linemerely for the sake of simplicity. The opposing end of heater portion 54connects to ground.

The connecting circuit 90 also includes a constant current source CC,which will be assumed to be powered using a nominal voltage of fivevolts or any other suitable power source that is available. The constantcurrent source CC connects to the first sensing electrode 70 viaresistors R₁ and R₂. The voltage drop V₂ across resistor R₂ is measuredand provided by line L_(V2). The n-type sensing circuit 92 is completedto ground via first sensing electrode 70, semiconductor layer 56, andcommon electrode 62. The constant current source CC connects to thesecond sensing electrode 80 via resistors R₃ and R₄. The voltage drop V₄across resistor R₄ is measured and provided by line L_(V4). The p-typesensing circuit 94 is completed to ground via second sensing electrode80, semiconductor layer 58, and common electrode 62. Note that inalternate embodiments, resistor R₁ and/or resistor R₃ may be omittedfrom their respective circuits, or additional resistors may be added totheir respective circuits.

The connecting circuit 90 provides voltage drop V₂ to the controller 32via line L_(V2), voltage drop V_(HS) to controller 32 via line L_(VHS),the actual voltage V_(S) of voltage source VS₁ to controller 32 via lineL_(VS), and voltage drop V₄ to the controller 32 via line L_(V4). Theinformation provided by these lines allows the controller 32 todetermine the oxygen level sensed by oxygen sensing portion 60, and thusthe air:fuel ratio of the combustion process, as explained furtherbelow.

The controller 32 may determine the air:fuel ratio based on the currentI_(n) flowing through the n-type sensing circuit 92, the current I_(p)flowing through the p-type sensing circuit 94, and a valuerepresentative of the temperature of the oxygen sensor 50.

The temperature of the oxygen sensor 50 may be determined based on theresistance of the heater portion 54. For example, the current I_(H) inthe heater portion 54 may be calculated as the voltage drop V_(HS)across the shunt resistor R_(HS), divided by the resistance of the shuntresistor R_(HS), or I_(H)=V_(HS)/R_(HS). Then, the resistance R_(H) ofthe heater portion 54 may be calculated based on the voltage drop acrossthe heater portion 54 divided by the current I_(H) through the heaterportion 54. Thus, R_(H) may be calculated as R_(H)=(V_(S)−V_(HS))/I_(H).Then, using R_(H), temperature T may be calculated using a suitableformula, for example T=(M×R_(H))+B, where the slope M and the constant Bare dependent on the heater portion 54 design. As can be appreciated, Mand B can be determined in a calibration process, and the relevantvalues stored in memory of the engine management system 30 for use bythe controller 32.

The present invention takes into account that the resistance response ofthe oxygen sensing portion 60 is temperature dependent. For example, theresistance of the n-type sensing circuit 92 at a given fixed air:fuelratio in the rich region decreases with increasing temperature, evenwhen the temperature is clearly high enough for a good response.Likewise, the resistance of the p-type sensing circuit 94 at a givenfixed air:fuel ratio in the lean region decreases with increasingtemperature, even when the temperature is clearly high enough for a goodresponse. The decrease in resistance for a given voltage leads to anincrease in current.

The current I_(n) in the n-type sensing circuit 92 may be calculated asI_(n)=V₂/R₂, with R₂ being value known to the controller 32. The currentI_(p) in the p-type sensing circuit 94 may be calculated as I_(p)=V₄/R₄,with R₄ being a value known to the controller 32. Note that the totalcurrent ICC from constant current source CC is by definition I_(n) plusI_(p). With knowledge of both I_(n) and I_(p), the controller 32 maydetermine the air:fuel ratio as a function of I_(n) and I_(p), with thevalue of the air:fuel ratio varying in dependence on both I_(n) andI_(p). Thus, the magnitude of the value of the air:fuel varies independence on all of I_(n), I_(p), and temperature T of the oxygensensor 50, as described further below.

In some embodiments, the air:fuel ratio is a function of the ratio ofthe natural log of I_(n) to the natural log of I_(p), and temperature ofthe oxygen sensor 50. More particularly, λ=N×(In(I_(n))/In(I_(p)))+C, orλ=N×Ψ+C, where Ψ is the ratio of the natural logs of the currents (i.e.,Ψ=In(I_(n))/In(I_(p))). As shown in FIG. 6, N and C are different foreach temperature and each side of stoichiometry. For example, curve 102shows Ψ at 500° C., curve 104 shows Ψ at 600° C., curve 106 shows Ψ at700° C., and curve 108 shows Ψ at 800° C. Note that near stoichiometry,the accuracy becomes less reliable; but this is typically not asignificant issue because the maximum power air:fuel ratio point and themaximum fuel efficiency air:fuel ratio point for most applications arewell away from stoichiometry. Note also, that discrimination is betterat lower temperatures. The values of N and C for various temperaturesand each side of stoichiometry may be established in a calibrationprocess, and the relevant relationships/values, perhaps represented by atable of values, stored in memory of the engine management system 30 foruse by the controller 32. Thus, the controller 32 is able to determinethe air:fuel ratio based on the current I_(n) flowing through the n-typesensing circuit 92, the current I_(p) flowing through the p-type sensingcircuit 94, and the temperature of the oxygen sensor 50.

The controller 32 receives the inputs derived from the oxygen sensor 50and other sensors, and advantageously controls the operation of the fuelmetering, ignition timing, and other engine functions. Relevant to thepresent discussion and with reference to FIGS. 5-7, the controller 32receives voltage drop V₂ on line L_(V2), voltage drop V_(HS) on lineL_(VHS), voltage level V_(S) on line L_(VS), and voltage drop V₄ on lineL_(V4). The determination process typically includes, as shown in FIG.7, supplying a constant current to the oxygen sensing portion 60 (step210). Then, based on the inputs derived from the oxygen sensor 50 and/orthe connecting circuit 90, the controller 32 determines the currentI_(n) in the n-type sensing circuit 92 (step 220), as described above.The controller 32 also determines the current I_(p) in the p-typesensing circuit 94 (step 230), as described above. The controller 32also determines the temperature value T representative of thetemperature of the oxygen sensor 50 (step 240). Then, the controller 32determines a first value ATF representative of the air:fuel ratio basedon I_(n), I_(p), and T (step 250), as described above. As can beappreciated, the first value ATF is typically a λ value. Thedetermination of ATF may utilize a look-up table of current values,temperature values, and corresponding ATF values (e.g., λ values), forthe particular oxygen sensor 50, or the “class” of oxygen sensor 50(e.g., particular model or series). Alternatively, AFT may be determinedbased on a formula, where all of I_(n), I_(p), an T are independentvariables of the formula. Once ATF is determined, the controller 32 maythen control the engine 10 based on ATF, in any suitable fashion (step260). For example, the controller 32 may cause the fuel metering rate tobe increased (lowering λ) or decreased (raising λ), via suitable controlsignals sent to throttle body and fuel injector 16. As can beappreciated, the controller 32 may repeat the process above to updateATF. This updating may occur periodically, or may be a triggered update(such as in response to a change in input air conditions), as isappropriate.

The discussion above has generally been in the context of thetemperature of the oxygen sensor 50 being derived from the resistance ofthe heating portion 54 that is part of the oxygen sensor 50. Thus, theheating portion 54 fills two roles: heating the oxygen sensor 50 andsensing temperature thereof. However, in some embodiments, a temperaturesensor distinct from the heating portion 54 may alternatively employed.Thus, the oxygen sensor 50 may include a thermocouple or other suitabletemperature sensing device 51, in addition to the oxygen sensing portion60 and the optional heating portion 54. Such a temperature sensor 51 isshown in FIG. 5 in dashed lines to indicate its optional presence, withits connection line to controller 32 not shown for simplicity. Note alsothat the temperature value need not be a calculated temperature per se,but may alternatively be any value indicative of the temperature, suchas the resistance R_(H) itself of the heater portion 54 or theresistance/voltage of temperature sensing device 51; both T and R_(H)(and other similar values indicative of the sensed temperature) areencompassed by the term “temperature value representative of thetemperature of the oxygen sensor.”

The discussion above has generally been in the context of controlling anengine 10 having a single cylinder/combustion chamber. However, asimilar approach may be used with engines having multiple cylinders,such as that shown in FIG. 8 with cylinders J, K, L, and P. In FIG. 8, asingle common oxygen sensor 50 is used for multiple cylinders. Thecontroller 32 may control the engine parameters (e.g., fuel meteringrate) based on readings from the oxygen sensor 50, or, if the oxygensensor 50 and controller 32 have fast enough response time, thecontroller 32 may be able to control the engine parameters on anindividual cylinder basis. Another multi-cylinder arrangement is shownin FIG. 9, where each cylinder has its own dedicated oxygen sensor 50.With this arrangement, the controller 32 may more easily control thecylinder-specific engine parameters (e.g., fuel metering rate) on anindividual cylinder basis based on readings from the correspondingoxygen sensor 50.

The discussion above has generally been in the context of the oxygensensor 50 working in what may be referred to as a “wideband” mode, suchthat the oxygen sensor 50 is able to help determine oxygen levels inboth the rich region and the lean region. In some embodiments, theoxygen sensor 50 may also temporarily operate as an n-type narrow-bandsensor by, for example, disabling the p-type sensing circuit 94, andrely on data from the n-type sensing circuit 92 to sense when λ reaches1.00 by the sudden step-type rise in resistance as A is increased. Or,alternatively, the oxygen sensor 50 may also temporarily operate as ap-type narrow-band sensor by, for example, disabling the n-type sensingcircuit 92, and rely on data from the p-type sensing circuit 94 to sensewhen λ reaches 1.00 by the sudden step-type rise in resistance as λ isdecreased.

The discussion above has generally been in the context of an internalcombustion engine; however, the present invention is not limited inapplication to internal combustion engines. Indeed, the oxygen sensingmethod described above can be used to control combustion processesgenerally. Thus, for example, the method(s) described herein may be usedin combustion processes in a furnace or a water heater. As with theengine-based discussion above, the oxygen sensor 50 is disposed so as tosense exhaust gases in the exhaust plenum 19 from the combustionprocess.

The methods and engine control systems discussed above provide theopportunity for enhanced combustion and/or engine control so thatgreater fuel economy and/or reduced emissions may be achieved.

As used herein, an air:fuel ratio may be expressed as an un-normalizedratio (e.g., 14.7:1 for gasoline), or as a normalized ratio (e.g., λ).

The disclosure of all patents and patent publications mentioned aboveare incorporated herein by reference in their entirety.

The present invention may, of course, be carried out in other specificways than those herein set forth without departing from the scope of theinvention. The present embodiments are, therefore, to be considered asillustrative and not restrictive.

What is claimed is:
 1. A wideband oxygen sensor, comprising: asubstrate, the substrate being dielectric; a first common electrodeaffixed to the substrate and having first and second combs disposed onrespective first and second lateral sides of the first common electrode,each having a plurality of fingers; a first sensing electrode affixed tothe substrate and disposed on the first lateral side of the first commonelectrode in spaced relation thereto; a second sensing electrode affixedto the substrate and disposed on the second lateral side of the firstcommon electrode in spaced relation thereto; a first semiconductorbridge, comprising an n-type semiconducting material, disposed so as tointerconnect the first comb and the first sensing electrode, wherein thefirst semiconductor bridge is attached directly to the first commonelectrode; a second semiconductor bridge, comprising a p-typesemiconducting material, disposed in spaced relation to the n-typesemiconducting material and disposed so as to interconnect the secondcomb and the second sensing electrode; wherein the second semiconductorbridge is attached directly to the first common electrode and not inphysical contact with the first semiconductor bridge; wherein the firstand second semiconductor bridges are separated from each other by alateral gap.
 2. The wideband oxygen sensor of claim 1, furthercomprising: a first porous dielectric protective layer covering then-type semiconducting material; a second porous dielectric protectivelayer covering the p-type semiconducting material.
 3. The widebandoxygen sensor of claim 2, wherein the first porous dielectric layercomprises one or more catalytic precious metals and cerium oxide.
 4. Thewideband oxygen sensor of claim 1, further comprising a heater portionaffixed to the substrate in spaced relation to the first commonelectrode and electrically insulated from the n-type semiconductingmaterial and the p-type semiconducting material.
 5. The wideband oxygensensor of claim 4: wherein the first common electrode comprises a firstterminal; wherein the first sensing electrode comprises a secondterminal; wherein the second sensing electrode comprises a thirdterminal; wherein the heater portion comprises a fourth terminal.
 6. Thewideband oxygen sensor of claim 5, wherein first terminal is operativelyconnected to the heater portion.
 7. The wideband oxygen sensor of claim4: wherein the dielectric substrate has first and second oppositelyfacing surfaces; wherein the heater portion is disposed on the firstsurface of the substrate; wherein the first common electrode and boththe first and second sensing electrodes are disposed closer to thesecond surface of the substrate than to the heater portion.
 8. Thewideband oxygen sensor of claim 4, wherein the heater portion comprisesplatinum.
 9. The wideband oxygen sensor of claim 4: wherein the firstcommon electrode is disposed on the substrate; wherein the first sensingelectrode is disposed on the substrate; wherein the second sensingelectrode is disposed on the substrate; wherein the heater portion isaffixed to the substrate in spaced relation to the electrodes.
 10. Awideband oxygen sensor, comprising: a substrate, the substrate beingdielectric; a first common electrode affixed to the substrate; an n-typeoxygen sensing portion comprising an n-type semiconductor layer; ap-type oxygen sensing portion comprising an p-type semiconductor layer;wherein the n-type sensing portion and the p-type sensing portion sharethe first common electrode; wherein the n-type semiconductor layer andthe p-type semiconductor layer attach directly to the first commonelectrode, but are not in physical contact with each other such that alateral gap exists between the n-type semiconductor layer and the p-typesemiconductor layer.
 11. The wideband oxygen sensor of claim 10, furthercomprising: a first porous dielectric protective layer covering then-type semiconducting material; a second porous dielectric protectivelayer covering the p-type semiconducting material.
 12. The widebandoxygen sensor of claim 10, further comprising a heater portion affixedto the substrate in spaced relation to the first common electrode andelectrically insulated from the n-type oxygen sensing portion and thep-type oxygen sensing portion.
 13. The wideband oxygen sensor of claim12: wherein the dielectric substrate has first and second oppositelyfacing surfaces; wherein the heater portion is disposed on the firstsurface of the substrate; wherein the first common electrode and boththe n-type oxygen sensing portion and the p-type oxygen sensing portionare disposed closer to the second surface of the substrate than to theheater portion.
 14. The wideband oxygen sensor of claim 12, wherein theheater portion comprises platinum.
 15. A sensor system, comprising: awideband oxygen sensor, the wideband oxygen sensor comprising: asubstrate, the substrate being dielectric; a first common electrodeaffixed to the substrate; an n-type oxygen sensing portion comprising ann-type semiconductor layer; a p-type oxygen sensing portion comprisingan p-type semiconductor layer; wherein the n-type sensing portion andthe p-type sensing portion share the first common electrode; wherein then-type semiconductor layer and the p-type semiconductor layer attachdirectly to the first common electrode, but are not in physical contactwith each other such that a lateral gap exists between the n-typesemiconductor layer and the p-type semiconductor layer; connectingcircuits operatively connected to the first common electrode, the n-typesemiconductor layer, and the p-type semiconductor layer, the connectingcircuits comprising: a constant current source; a first pair ofresistors connected in series between the n-type semiconductor layer andthe constant current source; a second pair of resistors connected inseries between the p-type semiconductor layer and the constant currentsource; an n-type sensing circuit and a p-type sensing circuit; whereinthe n-type sensing circuit comprises the n-type sensing portion, theconstant current source, and the first pair of resistors; wherein thep-type sensing circuit comprises the p-type sensing portion, theconstant current source, and the second pair of resistors.